Okhyun Nam: шукати на сайті Z-Library

physica status solidi (a)

Рік:

2017

Мова:

english

Файл:

PDF, 2.26 MB

english, 2017

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m -sapphire using catalyst-free metal-organic chemical vapor deposition

Lee, Kyuseung, Chae, Sooryong, Jang, Jongjin, Min, Daehong, Kim, Jaehwan, Nam, Okhyun

Журнал:

AIP Advances

Рік:

2016

Мова:

english

Файл:

PDF, 6.10 MB

english, 2016

Efficiency Improvement of Deep-Ultraviolet Light Emitting Diodes with Gradient Electron Blocking Layers

So, Byeongchan, Kim, Jinwan, Shin, Eunyoung, Kwak, Taemyung, Kim, Taeyoung, Nam, Okhyun

Журнал:

Рік:

2017

Мова:

english

Файл:

PDF, 1.60 MB

english, 2017

Large-area far ultraviolet-C emission of Al0.73Ga0.27N/AlN multiple quantum wells using carbon nanotube based cold cathode electron-beam pumping

Lee, Joohyoung, Yoo, Sung Tae, So, Byeongchan, Park, Kyu Chang, Nam, Okhyun

Журнал:

Thin Solid Films

Рік:

2020

Файл:

PDF, 4.32 MB

2020

Correlations between photoluminescence and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition

In-Hwan Lee, Cheul-Ro Lee, Dong Chan Shin, Okhyun Nam, Yongjo Park

Журнал:

Рік:

2004

Мова:

english

Файл:

PDF, 120 KB

english, 2004

Characterization of optical and electrical quality of Mg-doped InxGa1−xN grown by MOCVD

Sung-Nam Lee, Tan Sakong, Wonseok Lee, Hosun Paek, Joongkon Son, Euijoon Yoon, Okhyun Nam, Y. Park

Журнал:

Рік:

2004

Мова:

english

Файл:

PDF, 200 KB

english, 2004

Investigation of optical and electrical properties of Mg-doped p-InxGa1−xN, p-GaN and p-AlyGa1−yN grown by MOCVD

Sung-Nam Lee, JoongKon Son, Tan Sakong, Wonseok Lee, Hosun Paek, Euijoon Yoon, Jiyoung Kim, Yong-Hoon Cho, Okhyun Nam, Yongjo Park

Журнал:

Рік:

2004

Мова:

english

Файл:

PDF, 209 KB

english, 2004

Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD

Sung-Nam Lee, JoongKon Son, Hosun Paek, Tan Sakong, Wonseok Lee, Kihong Kim, Euijoon Yoon, Jiyoung Kim, Yong-Hoon Cho, YoonJae Lee, SangSoo Kim, DoYoung Noh, Okhyun Nam, Yongjo Park

Журнал:

Рік:

2005

Мова:

english

Файл:

PDF, 400 KB

english, 2005

Characterization of optical and crystal qualities in InxGa1–xN/InyGa1–yN multi-quantum wells grown by MOCVD

Sung-Nam Lee, Tan Sakong, Wonseok Lee, Hosun Paek, Moonsuk Seon, In-Hwan Lee, Okhyun Nam, Yongjo Park

Журнал:

Solid State Communications

Рік:

2003

Мова:

english

Файл:

PDF, 974 KB

english, 2003

Optical properties and recombination dynamics of InGaN/GaN multiple quantum wells with Si-doped barriers

Mee-Yi Ryu, Phil Won Yu, Eunsoon Oh, Chulsoo Sone, Okhyun Nam, Yongjo Park

Журнал:

Рік:

2001

Мова:

english

Файл:

PDF, 409 KB

english, 2001

Optical properties of InGaN/GaN double quantum wells with varying well thickness

Mee-Yi Ryu, Gyu Gwang Shim, Phil Won Yu, Eunsoon Oh, Chulsoo Sone, Okhyun Nam, Yongjo Park

Журнал:

Solid State Communications

Рік:

2001

Мова:

english

Файл:

PDF, 198 KB

english, 2001

Study of green light-emitting diodes grown on semipolar (11–22) GaN/m-sapphire with different crystal qualities

Dong-Sub Oh, Jong-Jin Jang, Okhyun Nam, Keun-Man Song, Sung-Nam Lee

Журнал:

physica status solidi (a)

Рік:

2011

Мова:

english

Файл:

PDF, 381 KB

english, 2011

Effect of defects on the luminescence in semipolar InGaN/GaN quantum wells on planar and patterned m-plane sapphire substrate

Seunga Lee, Jongjin Jang, Kwan-Hyun Lee, Jung-Hwan Hwang, Joocheol Jeong, Okhyun Nam

Журнал:

Рік:

2012

Мова:

english

Файл:

PDF, 549 KB

english, 2012

Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Geunho Yoo, Hyunsung Park, Donghun Lee, Hyoungjin Lim, Seunga Lee, Bohyun Kong, Hyungkoun Cho, Hyoungwon Park, Heon Lee, Okhyun Nam

Журнал:

Current Applied Physics

Рік:

2011

Мова:

english

Файл:

PDF, 997 KB

english, 2011

Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate

Hyoungwon Park, Kyeong-Jae Byeon, Jong-Jin Jang, Okhyun Nam, Heon Lee

Журнал:

Microelectronic Engineering

Рік:

2011

Мова:

english

Файл:

PDF, 1.30 MB

english, 2011

Improvement of crystal quality and optical property in (11−22) semipolar InGaN/GaN LEDs grown on patterned m-plane sapphire substrate

Jang, Jongjin, Lee, Kwanhyun, Hwang, Junghwan, Jung, Joocheol, Lee, Seunga, Lee, Kyuho, Kong, Bohyun, Cho, Hyunghoun, Nam, Okhyun

Журнал:

Electronic Materials Letters

Рік:

2012

Мова:

english

Файл:

PDF, 768 KB

english, 2012

Correlation between luminescence and defects in nonpolar and semipolar InGaN/GaN quantum wells on planar and patterned sapphire substrates

Lee, Seunga, Yoo, Geunho, Jang, Jongjin, Won, Youngjong, Nam, Okhyun

Журнал:

Рік:

2014

Мова:

english

Файл:

PDF, 537 KB

english, 2014

Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer

Jeong, Joocheol, Jang, Jongjin, Hwang, Jungwhan, Jung, Chilsung, Kim, Jinwan, Lee, Kyungjae, Lim, Hyoungjin, Nam, Okhyun

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 1.22 MB

english, 2013

Defect reduction in (11–22) semipolar GaN with embedded InN islands on m-plane sapphire

Jung, Chilsung, Jang, Jongjin, Hwang, Junghwan, Jeong, Joocheol, Kim, Jinwan, Lee, kyungjae, Nam, Okhyun

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 726 KB

english, 2013

High-quality a-plane (11–20) GaN growth using double-lens structure on r-plane sapphire

Min, Daehong, Yoo, Geunho, Moon, Seunghwan, Kwak, Joonseop, Kim, Hyeongjin, Nam, Okhyun

Журнал:

Рік:

2014

Мова:

english

Файл:

PDF, 4.36 MB

english, 2014

Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy

Woo, Seohwi, Kim, Minho, So, Byeongchan, Yoo, Geunho, Jang, Jongjin, Lee, Kyuseung, Nam, Okhyun

Журнал:

Рік:

2014

Мова:

english

Файл:

PDF, 2.95 MB

english, 2014

Self-assembled growth of inclined GaN nanorods on (10−10) m-plane sapphire using metal–organic chemical vapor deposition

Chae, Sooryong, Lee, Kyuseung, Jang, Jongjin, Min, Daehong, Kim, Jaehwan, Nam, Okhyun

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 1.66 MB

english, 2015

Characterization of a -plane InGaN light-emitting diodes with a SiN x interlayer grown on a patterned sapphire substrate by metal–organic chemical vapor deposition

Yoo, Geunho, Min, Daehong, Lee, Kyseung, Jang, Jongjin, Moon, Seunghwan, Chae, Sooryong, Kim, Jaehwan, Nam, Okhyun

Журнал:

Рік:

2014

Мова:

english

Файл:

PDF, 1.20 MB

english, 2014

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor

Kyong-Hee Joo,, Chang-Rok Moon,, Sung-Nam Lee,, Xiofeng Wang,, Jun Kyu Yang,, In-Seok Yeo,, Duckhyung Lee,, Okhyun Nam,, U-In Chung,, Joo Tae Moon,, Byung-Il Ryu,

Рік:

2006

Мова:

english

Файл:

PDF, 3.98 MB

english, 2006

Regrowth of Semipolar GaN on Nanoporous GaN Template by Metal Organic Chemical Vapor Deposition

Lee, Dong-Hun, Jang, Jong-Jin, Kong, Bo-Hyun, Cho, Hyung-Koun, Nam, Okhyun

Журнал:

Рік:

2010

Мова:

english

Файл:

PDF, 326 KB

english, 2010

Comparison between the relaxation mechanisms of thick (0001) polar and $(11\bar{2}2)$ semipolar InGaN layers

Kim, Jaehwan, Min, Daehong, Jang, Jongjin, Lee, Kyuseung, Chae, Sooryong, Nam, Okhyun

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 948 KB

english, 2015

AlN Nanostructures Fabricated on a Vicinal Sapphire (0001) Substrate

Eom, Daeyong, Kim, Jinwan, Lee, Kyungjae, Jeon, Minhwan, Heo, Cheon, Pyeon, Jaedo, Nam, Okhyun

Журнал:

Crystal Growth & Design

Рік:

2015

Мова:

english

Файл:

PDF, 7.80 MB

english, 2015

Improved Performance of (112̄2) Semipolar InGaN/GaN Light-Emitting Diodes Grown Using a Hemispherically Patterned SiO 2 Mask

Min, Daehong, Yoo, Geunho, Ryu, Yongwoo, Moon, Seunghwan, Nam, Kibum, Lim, Hongchul, Nam, Okhyun

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 1000 KB

english, 2013

A Nonpolar a -Plane GaN Grown on a Hemispherical Patterned r -Plane Sapphire Substrate

Yoo, Geunho, Park, Hyunsung, Lim, Hyoungjin, Lee, Seunga, Nam, Okhyun, Moon, Youngboo, Lim, Chaerok, Kong, Bohyun, Cho, Hyungkoun

Журнал:

Key Engineering Materials

Рік:

2011

Мова:

english

Файл:

PDF, 699 KB

english, 2011

Monitoring of Bone Temperature during Osseous Preparation for Orthodontic Micro-Screw Implants: Effect of Motor Speed and Ressure

Nam, Okhyun, Yu, Wonjae, Choi, Man Yong, Kyung, Hee Moon

Журнал:

Рік:

2006

Мова:

english

Файл:

PDF, 535 KB

english, 2006

Self-compensation effect in Si-doped Al 0.55 Ga 0.45 N layers for deep ultraviolet applications

Pyeon, Jaedo, Kim, Jinwan, Jeon, Minhwan, Ko, Kwangse, Shin, Eunyoung, Nam, Okhyun

Журнал:

Journal of Applied Physics

Рік:

2015

Мова:

english

Файл:

PDF, 917 KB

english, 2015

Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

Kim, Jaehwan, Min, Daehong, Jang, Jongjin, Lee, Kyuseung, Chae, Sooryong, Nam, Okhyun

Журнал:

Рік:

2014

Мова:

english

Файл:

PDF, 2.20 MB

english, 2014

Growth and characterization of high quality AlN using combined structure of low temperature buffer and superlattices for applications in the deep ultraviolet

Kim, Jinwan, Pyeon, Jaedo, Jeon, Minhwan, Nam, Okhyun

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 959 KB

english, 2015

Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs)

Jang, Jongjin, Woo, Seohwi, Min, Daehong, Nam, Okhyun

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 588 KB

english, 2015

Fabrication of AlN Nano-Structures Using Polarity Control by High Temperature Metalorganic Chemical Vapor Deposition

Eom, Daeyong, Kim, Jinwan, Lee, Kyungjae, Jeon, Minhwan, Heo, Cheon, Pyeon, Jaedo, Nam, Okhyun

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 786 KB

english, 2015

Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiN x insertion layer: Influence of dislocations

Lee, Seunga, Honda, Yoshio, Amano, Hiroshi, Jang, Jongjin, Nam, Okhyun

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 1.15 MB

english, 2016

High Quality Al-Polar AlN Growth on (0001) Sapphire Using Polarity-Selective Thermal Etching by High Temperature Metalorganic Chemical Vapor Deposition

Jeon, Minhwan, Kim, Jinwan, Lee, Kyungjae, Eom, Daeyong, Pyeon, Jaedo, Heo, Cheon, Nam, Okhyun

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 731 KB

english, 2015

SPIE Proceedings [SPIE Asia-Pacific Optical Communications - Gwangju, USA (Sunday 3 September 2006)] Optoelectronic Materials and Devices - Waveguide structural effect on ripples of far-field pattern in 405-nm GaN-based laser diodes

Hwang, Sungmin, Shim, Jongin, Ryu, Hanyoul, Ha, Kyung-ho, Chae, Junghye, Nam, Okhyun, Lee, Yong Hee, Koyama, Fumio, Luo, Yi

Рік:

2013

Мова:

english

Файл:

PDF, 396 KB

english, 2013

Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

Woo, Seohwi, Lee, Sangil, Choi, Uiho, Lee, Hyunjae, Kim, Minho, Han, Jaiyong, Nam, Okhyun

Журнал:

CrystEngComm

Рік:

2016

Мова:

english

Файл:

PDF, 2.38 MB

english, 2016

Semipolar (11–22) InGaN-Based Light-Emitting Diodes with Low Defects Grown on m-Plane Sapphire Using Metalorganic Chemical Vapor Epitaxy

Jang, Jongjin, Lee, Kyuseung, Min, Daehong, Kim, Jaehwan, Chae, Sooryong, Lee, Gyungbae, Nam, Okhyun

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 348 KB

english, 2016

GaN Growth on SiC (0001) Substrates by Metal-Organic Chemical Vapor Deposition

Lee, Kyungbae, So, Byeongchan, Lee, Kyungjae, Heo, Cheon, Ko, Kwangse, Jang, Jongjin, Nam, Okhyun

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 382 KB

english, 2016

Polarity of Aluminum Nitride Layers Grown by High-Temperature Metal Organic Chemical Vapor Deposition

Lee, Kyeongjae, Kim, Jinwan, Eom, Daeyong, Jeon, Minhwan, Heo, Cheon, Pyeon, Jaedo, Nam, Okhyun

Журнал: